The study of the anomalous Hall effect (AHE) in two-dimensional (2D) transition metal dichalcogenides (TMDs) has gained significant attention in recent years due to its potential applications in spintronic devices. This research aims to elucidate the underlying mechanisms of AHE in TMD monolayers at room temperature. Using density functional theory (DFT) calculations, we investigated the electronic band structure of several TMDs, focusing on how spin-orbit coupling influences the Hall conductivity. Our findings reveal a strong correlation between the intrinsic spin-orbit interaction and the observed anomalous Hall conductivity. Notably, the presence of non-trivial Berry curvature in certain TMDs significantly enhances the Hall response compared to conventional metals. These results suggest that 2D TMDs are promising candidates for next-generation spintronic applications. In conclusion, by demonstrating the impact of band topology on AHE in TMDs, this study provides a theoretical foundation for the design of highly efficient spintronic devices based on 2D materials.