Cadmium indium selenide films were deposited for the first time by the pulse plating technique at different duty cycles in the range of 6 – 50 % and at a constant deposition potential of – 0.95 V (SCE). The films exhibited single phase cadmium indium selenide. The grain size increased with increase of duty cycle. Optical band gap of the films increased from 1.97–2.16 eV with decrease of duty cycle . Resistivity decreased with increase of duty cycle. Mobility decreased with increase of duty cycle. Photosensor studies indicated linear photocurrent – voltage and photocurrent – illumination characteristics are observed. Spectral response measurements indicated maximum at the wavelength corresponding to the band gap of the film.