Cu+-doped p-CuS and Sn4+-doped n-CuS films were successfully deposited with chemical bath deposition at room temperature by controlling S/Cu molar ratio in the bath solution and doping Cu+ and Sn4+ cations, respectively. The films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, photoluminescence spectrophotometry, and electrical property measurement. The Cu+-doped CuS and Sn4+-doped CuS films having S/Cu molar ratio larger and less than the stoichiometric ratio showed p-type and n-type electrical conduction, respectively, and low electrical resistivity of~1.31×10-3 Ωcm and ~0.73–0.80×10-3 Ωcm, respectively. Moreover, the films had the average transmittances of ~20.1– 30.1 % in the wavelength range of 290–1100 nm. The direct band gaps and indirect band gaps of the films were estimated to be in the ranges of ~2.58–2.63 eV and ~1.6–1.78 eV, respectively.